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FQB22P10TM
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
P CHANNEL MOSFET, -100V, 22A D2-PAK - More Details
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Inventory: 8412
Minimum: 1
Total Price: USD $2.49
Unit Price: USD $2.48708
≥1 USD $2.48708
≥10 USD $2.3463
≥100 USD $2.21349
≥500 USD $2.0882
≥1000 USD $1.97
≥3000 USD $1.85849
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 125mOhm
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -22A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.75W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 170 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) -22A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 88A
Dual Supply Voltage 100V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
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