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ZXMP6A13GTA
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 1.7A SOT223
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Inventory: 8080
Minimum: 1
Total Price: USD $0.98
Unit Price: USD $0.9804
≥1 USD $0.9804
≥10 USD $0.80465
≥100 USD $0.779
≥500 USD $0.7543
≥1000 USD $0.7296
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 390mOhm
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2.3A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
Case Connection DRAIN
Turn On Delay Time 1.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 390m Ω @ 900mA, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 219pF @ 30V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 10V
Rise Time 2.2 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.7 ns
Turn-Off Delay Time 11.2 ns
Continuous Drain Current (ID) 2.3A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 7.8A
Dimensions
Height 1.65mm
Length 6.7mm
Width 3.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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