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FDT86244
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 2.8A SOT-223
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Inventory: 2632
Minimum: 1
Total Price: USD $0.48
Unit Price: USD $0.484872
≥1 USD $0.484872
≥10 USD $0.457429
≥100 USD $0.431533
≥500 USD $0.407102
≥1000 USD $0.384066
Technical Details
Supply Chain
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 12 hours ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 250.2mg
Transistor Element Material SILICON
Dimensions
Height 1.7mm
Length 3.7mm
Width 6.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
Turn On Delay Time 5.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 128m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 395pF @ 75V
Current - Continuous Drain (Id) @ 25°C 2.8A Tc
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 1.3 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.4 ns
Turn-Off Delay Time 9.8 ns
Continuous Drain Current (ID) 2.8A
Threshold Voltage 3.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Nominal Vgs 3.1 V
Feedback Cap-Max (Crss) 5 pF
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