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Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 9.9A 8SOIC
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Inventory: 1970
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 14.6MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.6m Ω @ 9.9A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 1025pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.9A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 9.9A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 79A
Nominal Vgs 1.1 V
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