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SI2309CDS-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 60V 1.6A SOT23-3
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Inventory: 32210
Minimum: 5
Total Price: USD $0.81
Unit Price: USD $0.1615
≥5 USD $0.1615
≥50 USD $0.133
≥150 USD $0.12825
≥500 USD $0.12445
≥3000 USD $0.12065
≥6000 USD $0.10735

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Dimensions

Height 1.02mm
Length 3.04mm
Width 1.4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 345mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Voltage 60V
Power Dissipation-Max 1W Ta 1.7W Tc
Element Configuration Single
Current 12A
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Turn On Delay Time 40 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 345m Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 30V
Current - Continuous Drain (Id) @ 25°C 1.6A Tc
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Rise Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 1.2A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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