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IRLR8726TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 86A DPAK
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Inventory: 22000
Minimum: 2000
Total Price: USD $323
Unit Price: USD $0.1615
≥2000 USD $0.1615
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 75W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 15V
Current - Continuous Drain (Id) @ 25°C 86A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Rise Time 49 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 86A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.058Ohm
Drain to Source Breakdown Voltage 30V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Dimensions
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
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