Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 29mOhm
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 6.5A
Base Part Number IRF7319PBF
Number of Elements 2
Row Spacing 6.3 mm
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 13 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 32 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 1 V