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SI7997DP-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8 Dual
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 30V 60A PPAK SO-8
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Inventory: 1831
Minimum: 1
Total Price: USD $4.27
Unit Price: USD $4.268308
≥1 USD $4.268308
≥10 USD $4.026699
≥100 USD $3.798773
≥500 USD $3.583752
≥1000 USD $3.380897
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1.12mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 5.5mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 46W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7997
Pin Count 8
JESD-30 Code R-XDSO-C5
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) -20.8A
Threshold Voltage -2.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 60A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 45 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Standard
Alternative Model
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