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IRF7509TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V 2.7A/2A MICRO8
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Inventory: 5296
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 200mOhm
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 1.25W
Terminal Form GULL WING
Current Rating 2.7A
Base Part Number IRF7509PBF
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.7A 2A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 12 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 9.3 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 1 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.11mm
Length 3.048mm
Width 3.048mm
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