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IPW60R045CPFKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
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Inventory: 9001
Minimum: 1
Total Price: USD $15.16
Unit Price: USD $15.163212
≥1 USD $15.163212
≥10 USD $14.304923
≥100 USD $13.495212
≥500 USD $12.731329
≥1000 USD $12.010687
Technical Details
Supply Chain
Factory Lead Time 49 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 60A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 431W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 431W
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 20 ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 600V
Dimensions
Height 25.549mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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