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DMN63D8LW-13
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage SC-70, SOT-323
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 0.38A SOT323
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Pricing & Ordering
Inventory: 9920
Minimum: 10
Total Price: USD $0.36
Unit Price: USD $0.035968
≥10 USD $0.035968
≥100 USD $0.029097
≥300 USD $0.02566
≥1000 USD $0.023084
≥5000 USD $0.019422
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 2.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 23.2pF @ 25V
Current - Continuous Drain (Id) @ 25°C 380mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 11.4 ns
Continuous Drain Current (ID) 380mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.38A
Drain-source On Resistance-Max 4.5Ohm
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Height 1.1mm
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