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T2N7002AK,LM
Toshiba Semiconductor and StorageRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 0.2A
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Inventory: 6459
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.05415
≥1 USD $0.05415
≥10 USD $0.04465
≥100 USD $0.04275
≥500 USD $0.0418
≥1000 USD $0.04085
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
Series U-MOSVII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 320mW Ta
Power Dissipation 320mW
Turn On Delay Time 2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 17pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 7 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 17pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 2.8Ohm
Rds On Max 3.9 Ω
Compliance
RoHS Status RoHS Compliant
Dimensions
Height 1.1mm
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