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IXFN48N50
IXYSRoHS 
RoHS compliant
RoHS compliantPackage SOT-227-4, miniBLOC
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 48A SOT-227B
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Inventory: 1497
Minimum: 1
Total Price: USD $22.93
Unit Price: USD $22.92658
≥1 USD $22.92658
≥10 USD $21.62885
≥100 USD $20.40458
≥500 USD $19.2496
≥1000 USD $18.16
≥3000 USD $17.13208
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerFET?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
ECCN Code EAR99
Resistance 100mOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 48A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PUFM-X4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 520W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 60 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 48A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 192A
Dual Supply Voltage 500V
Nominal Vgs 4 V
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 3
Transistor Element Material SILICON
Alternative Model
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