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IPW60R031CFD7XKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description CoolMOS CFD7 Power Transistor High Power 31m? 278W 600V PG-TO 247-3
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Inventory: 5214
Minimum: 1
Total Price: USD $10.24
Unit Price: USD $10.236619
≥1 USD $10.236619
≥10 USD $9.657179
≥100 USD $9.110542
≥500 USD $8.594858
≥1000 USD $8.108358

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS? CFD7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 278W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 278W
Turn On Delay Time 48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 32.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.63mA
Input Capacitance (Ciss) (Max) @ Vds 5623pF @ 400V
Current - Continuous Drain (Id) @ 25°C 63A Tc
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 175 ns
Continuous Drain Current (ID) 63A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 277A
Avalanche Energy Rating (Eas) 326 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 25.4mm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

D251N12B
Infineon

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