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STP20NM60

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 20A TO-220
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Inventory: 1421
Minimum: 1
Total Price: USD $8.3
Unit Price: USD $8.2954
≥1 USD $8.2954
≥10 USD $6.80675
≥100 USD $6.59395
≥500 USD $6.38115
≥1000 USD $6.16835

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 290mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating 20A
Base Part Number STP20N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 192W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 192W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 650 mJ
Nominal Vgs 4 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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