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IPB015N08N5ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-7, D2Pak (6 Leads + Tab)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 80V 180A D2PAK-2
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Inventory: 8877
Minimum: 1
Total Price: USD $6.75
Unit Price: USD $6.749498
≥1 USD $6.749498
≥10 USD $6.367463
≥100 USD $6.007026
≥500 USD $5.667012
≥1000 USD $5.346238
Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 279μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 16900pF @ 40V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 222nC @ 10V
Rise Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 83 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Max Junction Temperature (Tj) 175°C
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Dimensions
Height 4.5mm
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Weight 1.59999g
Transistor Element Material SILICON
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