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DMN2016UTS-13
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 8-TSSOP (0.173, 4.40mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 8.58A 8-TSSOP
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Inventory: 2979
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.5814
≥1 USD $0.5814
≥10 USD $0.4769
≥100 USD $0.4617
≥500 USD $0.44745
≥1000 USD $0.43225
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Weight 157.991892mg
Transistor Element Material SILICON
Dimensions
Height 1.025mm
Length 4.5mm
Width 3.1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 14.5mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 880mW
Terminal Form GULL WING
Base Part Number DMN2016U
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 880mW
Turn On Delay Time 10.39 ns
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1495pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V
Rise Time 11.66 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 16.27 ns
Turn-Off Delay Time 59.38 ns
Continuous Drain Current (ID) 8.58A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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