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DMN3135LVT-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 3.5A TSOT26
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Inventory: 61
Minimum: 1
Total Price: USD $0.18
Unit Price: USD $0.181642
≥1 USD $0.181642
≥10 USD $0.171358
≥100 USD $0.16166
≥500 USD $0.152503
≥1000 USD $0.143876

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 840mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 305pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Rise Time 4.6 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 2.5 ns
Turn-Off Delay Time 13.1 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.3A
Drain-source On Resistance-Max 0.047Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Alternative Model

SFT1440-TL-E
Rochester Electronics, LLC

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