Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
DMN2005DLP4K-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 6-XFDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 0.3A 6-DFN
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 3248
Minimum: 1
Total Price: USD $2.49
Unit Price: USD $2.489
≥1 USD $2.489
≥10 USD $2.0425
≥100 USD $1.97885
≥500 USD $1.91425
≥1000 USD $1.8506
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Dimensions
Height 350μm
Length 1.3mm
Width 1mm
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Powers
Max Power Dissipation 400mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMN2005DLP4K
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 900mV @ 100μA
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 3.5Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You