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SI1902CDL-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 20V 1A DUAL NCH
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Inventory: 3035
Minimum: 1
Total Price: USD $0.67
Unit Price: USD $0.67165
≥1 USD $0.67165
≥10 USD $0.551
≥100 USD $0.5339
≥500 USD $0.5168
≥1000 USD $0.4997
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1.1mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 235mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Max Power Dissipation 420mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 235m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 62pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.1A
Gate Charge (Qg) (Max) @ Vgs 3nC @ 10V
Rise Time 13 ns
Fall Time (Typ) 9 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 1A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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