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FDG6320C
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET N/P-CH 25V 0.22A/0.14A 6-Pin SC-70 T/R
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Inventory: 7353
Minimum: 1
Total Price: USD $63.59
Unit Price: USD $63.59395
≥1 USD $63.59395
≥10 USD $52.1797
≥100 USD $50.54855
≥500 USD $48.91835
≥1000 USD $47.28815
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Dimensions
Height 1.1mm
Length 2mm
Width 1.25mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 4Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 220mA
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 5 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C 220mA 140mA
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Rise Time 8 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 8 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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