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DMC2990UDJ-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage SOT-963
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 20V SOT963
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Inventory: 9930
Minimum: 5
Total Price: USD $0.37
Unit Price: USD $0.07315
≥5 USD $0.07315
≥50 USD $0.05985
≥150 USD $0.05795
≥500 USD $0.05605
≥2500 USD $0.05415
≥5000 USD $0.04845
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form FLAT
Base Part Number DMC2990
Reference Standard AEC-Q101
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.8 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 990m Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 27.6pF @ 15V
Current - Continuous Drain (Id) @ 25°C 450mA 310mA
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Rise Time 5.7 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 16.4 ns
Turn-Off Delay Time 31.1 ns
Continuous Drain Current (ID) 310mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.31A
Drain-source On Resistance-Max 0.99Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 450μm
Length 1.05mm
Width 850μm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-963
Number of Pins 6
Transistor Element Material SILICON
Alternative Model
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