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DMN1029UFDB-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 6-UDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 12V 5.6A 6UDFN
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Inventory: 5080
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.083523
≥1 USD $0.083523
≥500 USD $0.061417
≥1000 USD $0.051179
≥2000 USD $0.046956
≥5000 USD $0.043883
≥10000 USD $0.040821
≥15000 USD $0.039476
≥50000 USD $0.038817
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation 1.4W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 1.4W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 914pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 8V
Drain to Source Voltage (Vdss) 12V
Continuous Drain Current (ID) 5.6A
Drain-source On Resistance-Max 0.029Ohm
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
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