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PMDT290UNE,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 0.8A SOT666
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Inventory: 5000
Minimum: 1
Total Price: USD $0.06
Unit Price: USD $0.05605
≥1 USD $0.05605
≥500 USD $0.0456
≥1000 USD $0.04465
≥2000 USD $0.04275
≥5000 USD $0.0418
≥10000 USD $0.03705
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 500mW
Terminal Form FLAT
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 390mW
Turn On Delay Time 6 ns
Power - Max 500mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V
Rise Time 4ns
Fall Time (Typ) 31 ns
Turn-Off Delay Time 86 ns
Continuous Drain Current (ID) 800mA
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 20V
Drain Current-Max (Abs) (ID) 0.8A
Drain-source On Resistance-Max 0.38Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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