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IRF7324TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 20V 9A 8-SOIC
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Inventory: 952
Minimum: 1
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 18mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -9A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRF7324PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 17 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2940pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A
Gate Charge (Qg) (Max) @ Vgs 63nC @ 5V
Rise Time 36 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 190 ns
Turn-Off Delay Time 170 ns
Continuous Drain Current (ID) -9A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 71A
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 270 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Alternative Model
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