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DMP2200UDW-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 20V 0.9A SOT363
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Inventory: 4804
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.09405
≥1 USD $0.09405
≥10 USD $0.0779
≥100 USD $0.07505
≥500 USD $0.07315
≥1000 USD $0.0703
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 450mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode DUAL GATE, ENHANCEMENT MODE
Turn On Delay Time 9.8 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 880mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 184pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 88ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 24.4 ns
Continuous Drain Current (ID) 900mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.9A
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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