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NTJD5121NT1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 0.295A SOT363
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Inventory: 8841
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.07116
≥1 USD $0.07116
≥500 USD $0.05232
≥1000 USD $0.0436
≥2000 USD $0.04
≥5000 USD $0.03738
≥10000 USD $0.03478
≥15000 USD $0.03363
≥50000 USD $1.97833
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Dimensions
Height 1mm
Length 2.2mm
Width 1.35mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 1.6Ohm
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Max Power Dissipation 266mW
Terminal Form GULL WING
Base Part Number NTJD5121N
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Turn On Delay Time 22 ns
Power - Max 250mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Rise Time 34 ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 295mA
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.7 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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