Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF7351PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5.1 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.8m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 5.9 ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 64A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate