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DMC6040SSD-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 60V 5.1A/3.1A 8-SO
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Inventory: 30075
Minimum: 5
Total Price: USD $0.9
Unit Price: USD $0.17975
≥5 USD $0.17975
≥50 USD $0.155579
≥150 USD $0.145233
≥500 USD $0.132314
≥2500 USD $0.126564
≥5000 USD $0.123111

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.24W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard AEC-Q101
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.7 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.1A 3.1A
Gate Charge (Qg) (Max) @ Vgs 20.8nC @ 10V
Rise Time 6.3ns
Drain to Source Voltage (Vdss) 60V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 26.1 ns
Turn-Off Delay Time 58.7 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.1A
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Alternative Model

CPC3720C
IXYS Integrated Circuits Division

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