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DMC2004LPK-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 6-SMD, No Lead
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 20V 6-DFN
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Inventory: 4538
Minimum: 1
Total Price: USD $0.22
Unit Price: USD $0.22135
≥1 USD $0.22135
≥10 USD $0.1824
≥100 USD $0.1767
≥500 USD $0.171
≥1000 USD $0.1653
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Number of Pins 6
Weight 21.092045mg
Transistor Element Material SILICON
Dimensions
Height 480μm
Length 1.6mm
Width 1.2mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 500mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C 750mA 600mA
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 600mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.75A
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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