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SI7949DP-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8 Dual
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 60V 3.2A PPAK SO-8
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Inventory: 4322
Minimum: 1
Total Price: USD $5.53
Unit Price: USD $5.52995
≥1 USD $5.52995
≥10 USD $4.53815
≥100 USD $4.39565
≥500 USD $4.2541
≥1000 USD $4.11255
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8 Dual
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI7949
Pin Count 8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 64m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.2A
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) -5A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.064Ohm
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Alternative Model
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