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FDS89161LZ
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET PT5 100V Logic Level with Zener
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Inventory: 1942
Minimum: 1
Total Price: USD $10.74
Unit Price: USD $10.73975
≥1 USD $10.73975
≥10 USD $8.8122
≥100 USD $8.5367
≥500 USD $8.2612
≥1000 USD $7.9857
Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Max Power Dissipation 1.6W
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
Turn On Delay Time 3.8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 302pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 10V
Rise Time 10 ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 9.5 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.105Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 15A
Avalanche Energy Rating (Eas) 13 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Dimensions
Height 1.575mm
Length 4.9mm
Width 3.9mm
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