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IRF7307TRPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 20V 8-SOIC
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Inventory: 6139
Minimum: 1
Total Price: USD $4.03
Unit Price: USD $4.028
≥1 USD $4.028
≥10 USD $3.30505
≥100 USD $3.2015
≥500 USD $3.09795
≥1000 USD $2.99535
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 50mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 5.2A
Base Part Number IRF7307PBF
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.2A 4.3A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 26 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 33 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 5.2A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
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