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FDS9934C
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 20V Complementary PowerTrench
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Inventory: 7457
Minimum: 1
Total Price: USD $8.06
Unit Price: USD $8.05505
≥1 USD $8.05505
≥10 USD $6.60915
≥100 USD $6.403
≥500 USD $6.1959
≥1000 USD $5.98975
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 hours ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 30MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 6.5A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 16 ns
Power - Max 900mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A 5A
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Rise Time 9 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 9 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Dimensions
Height 1.575mm
Length 4.9mm
Width 3.9mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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