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SI5515CDC-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 20V 4A 1206-8
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Inventory: 4370
Minimum: 1
Total Price: USD $3.76
Unit Price: USD $3.75915
≥1 USD $3.75915
≥10 USD $3.08465
≥100 USD $2.98775
≥500 USD $2.8918
≥1000 USD $2.79585
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Max Power Dissipation 3.1W
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI5515
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 4A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.036Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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