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CSD88539ND
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 15A 8SOIC
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Inventory: 7712
Minimum: 1
Total Price: USD $2.05
Unit Price: USD $2.04792
≥1 USD $2.04792
≥10 USD $1.931997
≥100 USD $1.822634
≥500 USD $1.719465
≥1000 USD $1.622136
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 540.001716mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Max Power Dissipation 2.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number CSD88539
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 741pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 5 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.3A
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 46A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Dimensions
Height 1.75mm
Length 4.9mm
Width 3.91mm
Thickness 1.58mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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