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NTMD3P03R2G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 30V 2.34A 8SOIC
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Inventory: 5389
Minimum: 1
Total Price: USD $0.89
Unit Price: USD $0.8854
≥1 USD $0.8854
≥10 USD $0.72675
≥100 USD $0.70395
≥500 USD $0.68115
≥1000 USD $0.65835
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 85MOhm
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -3.05A
Base Part Number NTMD3P03
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 16 ns
Power - Max 730mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 24V
Current - Continuous Drain (Id) @ 25°C 2.34A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 16 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -3.05A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.7 V
Feedback Cap-Max (Crss) 135 pF
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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