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FDS8858CZ

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N/P-CH 30V 8.6A/7.3A 8-Pin SOIC N T/R
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Inventory: 9434
Minimum: 1
Total Price: USD $1.06
Unit Price: USD $1.064
≥1 USD $1.064
≥10 USD $0.87305
≥100 USD $0.8455
≥500 USD $0.81795
≥1000 USD $0.79135

Technical Details

Supply Chain

Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 17mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 900mW
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 8.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1205pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.6A 7.3A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 10 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 16 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 8.6A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -60V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.6 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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