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FDY2000PZ
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET -20V Dual P-Channel Spec PwrTrch MOSFET
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Inventory: 975
Minimum: 1
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 32mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 625mW
Terminal Form FLAT
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 630mW
Turn On Delay Time 6 ns
Power - Max 446mW
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 1.2 Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Rise Time 13 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 350mA
Threshold Voltage -1.03V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.35A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 600μm
Length 1.7mm
Width 1.2mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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