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DMN601VK-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 0.305A SOT-563
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Inventory: 999
Minimum: 1
Total Price: USD $0.48
Unit Price: USD $0.48355
≥1 USD $0.48355
≥10 USD $0.3971
≥100 USD $0.38475
≥500 USD $0.3724
≥1000 USD $0.36005
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 3.005049mg
Transistor Element Material SILICON
Dimensions
Height 600μm
Length 1.6mm
Width 1.2mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 2Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW CAPACITANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Max Power Dissipation 250mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 305mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMN601VK
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Continuous Drain Current (ID) 305mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.305A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 5 pF
Alternative Model
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