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IRFI4019H-117P
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-5 Full Pack
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 150V 8.7A TO-220FP
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Inventory: 5079
Minimum: 1
Total Price: USD $3.87
Unit Price: USD $3.87125
≥1 USD $3.87125
≥10 USD $3.1768
≥100 USD $3.07705
≥500 USD $2.97825
≥1000 USD $2.8785
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5 Full Pack
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 95MOhm
Subcategory FET General Purpose Power
Max Power Dissipation 18W
Terminal Position SINGLE
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 18W
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 95m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 6.6 ns
Drain to Source Voltage (Vdss) 150V
Fall Time (Typ) 3.1 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 8.7A
Threshold Voltage 4.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 34A
Avalanche Energy Rating (Eas) 77 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 86 ns
FET Feature Standard
Nominal Vgs 4.9 V
Dimensions
Height 9.02mm
Length 10.6172mm
Width 4.826mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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