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UM6K1NTN
ROHM SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V .1A SOT-363
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Inventory: 170
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.066167
≥1 USD $0.066167
≥500 USD $0.048654
≥1000 USD $0.04054
≥2000 USD $0.0372
≥5000 USD $0.03476
≥10000 USD $0.032332
≥15000 USD $0.031271
≥50000 USD $0.030755
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 13Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 150mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *K1
Pin Count 6
Number of Elements 2
Number of Channels 1
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 15 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 13pF @ 5V
Rise Time 35ns
Fall Time (Typ) 35 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 100mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.5 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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