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EM6K31T2R
ROHM SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 0.25A EMT6
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Inventory: 7755
Minimum: 5
Total Price: USD $1.36
Unit Price: USD $0.2717
≥5 USD $0.2717
≥50 USD $0.22325
≥150 USD $0.21565
≥500 USD $0.209
≥2500 USD $0.20235
≥5000 USD $0.18145
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory FET General Purpose Power
Max Power Dissipation 120mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *K31
Pin Count 6
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.5 ns
Power - Max 150mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 25V
Rise Time 5ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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