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FDS6986AS
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
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Inventory: 2467
Minimum: 1
Total Price: USD $3.53
Unit Price: USD $3.527921
≥1 USD $3.527921
≥10 USD $3.32823
≥100 USD $3.139846
≥500 USD $2.962118
≥1000 USD $2.794446
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Dimensions
Height 1.5mm
Length 5mm
Width 3.99mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series PowerTrench?, SyncFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 29MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 900mW
Terminal Form GULL WING
Current Rating 7.9A
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A 7.9A
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 9 ns
Fall Time (Typ) 3 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 7.9mA
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.5A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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