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SI7949DP-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8 Dual
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 60V 3.2A PPAK SO-8
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Inventory: 5332
Minimum: 1
Total Price: USD $13.83
Unit Price: USD $13.82535
≥1 USD $13.82535
≥10 USD $11.34395
≥100 USD $10.9896
≥500 USD $10.6343
≥1000 USD $10.27995
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8 Dual
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Dimensions
Height 1.04mm
Length 4.9mm
Width 5.89mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 64mOhm
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7949
Pin Count 8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 64m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.2A
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) -5A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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