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SI4943BDY-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET P-CH 20V 6.3A 8-Pin SOIC N T/R
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Inventory: 6096
Minimum: 1
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 19mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI4943
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 11 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.3A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Rise Time 10 ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) -8.4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.3A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.55mm
Length 5mm
Width 4mm
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