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FDMB2308PZ

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 6-WDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description Dual Common Drain P-Channel PowerTrench? MOSFET -20V, -7A, 36mO
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Inventory: 3000
Minimum: 1
Total Price: USD $4.93
Unit Price: USD $4.932876
≥1 USD $4.932876
≥10 USD $4.653658
≥100 USD $4.390244
≥500 USD $4.141742
≥1000 USD $3.907301

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Weight 12.0024mg
Transistor Element Material SILICON

Dimensions

Height 725μm
Length 3mm
Width 2mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 2.2W
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Power - Max 800mW
FET Type 2 P-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs 36m Ω @ 5.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3030pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 33 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 58 ns
Turn-Off Delay Time 74 ns
Continuous Drain Current (ID) 7A
JEDEC-95 Code MO-229
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 510 pF

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