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NVMFD5C672NLWFT1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 49A S08FL
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Inventory: 3983
Minimum: 1
Total Price: USD $13.42
Unit Price: USD $13.42445
≥1 USD $13.42445
≥10 USD $11.01525
≥100 USD $10.6704
≥500 USD $10.3265
≥1000 USD $9.9826
Technical Details
Supply Chain
Factory Lead Time 48 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 3.1W Ta 45W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11.9m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 793pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 0.0168Ohm
Pulsed Drain Current-Max (IDM) 146A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 66 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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