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FDS8935
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET -80V Dual P-Channel PowerTrench MOSFET
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Inventory: 6076
Minimum: 1
Total Price: USD $3.76
Unit Price: USD $3.75915
≥1 USD $3.75915
≥10 USD $3.08465
≥100 USD $2.98775
≥500 USD $2.8918
≥1000 USD $2.79585
Technical Details
Supply Chain
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 3.1W
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Turn On Delay Time 5 ns
Power - Max 1.6W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 183m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 879pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 3 ns
Drain to Source Voltage (Vdss) 80V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 2.1A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -80V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.8 V
Feedback Cap-Max (Crss) 36 pF
Dimensions
Height 1.5mm
Length 4mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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