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QS8J4TR
ROHM SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 30V 4A TSMT8
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Inventory: 8633
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Max Power Dissipation 550mW
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 56m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.056Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 16A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
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